MF161700 - SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry StdTpc-Documentation/Training This Test Method covers the

This Test Method  covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 × 1013 carriers/cm3 to about 8 × 1016 carriers/cm3 (resistivity range from about 0

The model contained in this Specification documents features of the equipment structure considered necessary for more than one (current or future) Equipment Communication Standards

org in November 2016

This Document provides terms and definitions of materials and defects within and on the surface of flat panel display (FPD) substrates and of dimensional

1 This Standard applies to the determination of metal extractable impurity characteristics of high purity materials and the wetted surfaces of components and equipment used in chemical distribution systems

MF161700 - SEMI MF1617 - Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry StdTpc-Documentation/Training This Test Method covers theNOTICE: This Document was reapproved with minor editorial changes. Secondary ion mass spectrometry (SIMS) can measure on polished silicon wafer product the following: the sodium and potassium areal densities that can affect voltage flatband shifts in integrated circuits, and, the aluminum areal density that can affect the thermal oxide growth rate. the iron areal density that can affect gate oxide integrity, minority carrier lifetime, and current