GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 You may consider ordering a

You may consider ordering a quick connecting flange at extra cost

applied voltage

This aluminum laminated film (115 um ) is used as casing material for polymer Li-Ion battery

8V @150Ah for single-cell  or  570Wh for battery pack without protection circus

Optional The 4" sintered diamond blade is the replacement for SYJ-150 Low Speed Cutting Saw

GaN -Single Crystal Substrate,N-type, (0001), 10x10.5x0.35 mm , 1SP Al2O3 You may consider ordering aGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Type: N type(undoped) Nominal Thickness 350+ 25 microns Dimension: 10 mm x 10. 5 mm