LaAlO3, (100) orn. 10 x 5 x 0.5 mm substrate , 1 side Epi polished Max. number of Channel 8 4 mm in Dia
$30.48
Description
4 mm in Dia
Active Material Proportion in Powder: 96%
Charge: constant current charge (CC)
Digital display for information including RPM and flow rates
5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3
LaAlO3, (100) orn. 10 x 5 x 0.5 mm substrate , 1 side Epi polished Max. number of Channel 8 4 mm in DiaSubstrate Specifications: Wafer Size: 10 x 5 x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5 Deg Polishing: One side CMP polished with free sub surface damage. Surface finish (RMS or Ra) : < 10A Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container. Lattice Constant a=3. 792 Pseudocubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature., please picture below
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