VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US LaAlO3 Thickness: 2
$402.50
Description
Thickness: 2
Furnace Feature
Spin Speed
Dimension: 100 mm x 100mm x 0
Mobility: (3330-3850) cm^2/V
VGF InP (100) undoped, 2" x 0.35 mm wafer, 1sp - IPUa50D035C1US LaAlO3 Thickness: 2InP single crystal wafer Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Undoped Conducting type: S C Polish: one side polished Resistivity: (1. 8 3. 05) x 10^ 1 ohm. cm Mobility: (4100 4340) cm^2 V. S EPD: <5000 cm^2 Carrier Concerntration: (4. 72 8. 27) x 10^15 cmE 3
Shipping Notes
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