GaP crystal for evaporation, purity >99.995%, 5x5x5 mm as cut - GaP050550SN 3D & Chemical A-Z Gd3Ga5O12 (GGG) single crystal

Gd3Ga5O12   (GGG) single crystal

25 mm +/- 0

Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films

Item Description Qty

Surface finish:  One side optical polished < 100A

GaP crystal for evaporation, purity >99.995%, 5x5x5 mm as cut - GaP050550SN 3D & Chemical A-Z Gd3Ga5O12 (GGG) single crystalComposition: GaP crystal, undoped Purity: > 99. 995 % Size: 5x5x5 mm Resistivity: >4x10^2 ohm. cm Mobility: 140 cm^2 Vs Carrier concentration: <10^14 cm^ 3 Surface: as cut Packing: plastic bag Related Products Target A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater