B + 0. 5o Polishing: one side side(Sb) polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation <111>B + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (5. 0E17 2. 0E18) cm 3 @77K Mobility 24,000 34,000 cm2 Vs EPD <1. 0"> B + 0. 5o Polishing: one side side(Sb) polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation <111>B + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (5. 0E17 2. 0E18) cm 3 @77K Mobility 24,000 34,000 cm2 Vs EPD <1. 0"> B + 0. 5o Polishing: one side side(Sb) polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation <111>B + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (5. 0E17 2. 0E18) cm 3 @77K Mobility 24,000 34,000 cm2 Vs EPD <1. 0"> InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished Gloveboxes & Dry Rooms 96 Sartorius KSW-Heat Oven – peerflow.io

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InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished Gloveboxes & Dry Rooms 96 Sartorius KSW-Heat Oven

$1095.88

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96 Sartorius KSW-Heat Oven

Membranes Film Box:

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0 E+3  / cm -2

which can be easily adapted onto the sample holder to clamp rod shape specimens with a diameter up to 1'' max

InSb (111)- B 2" dia x 0.45 mm, Te-doped, N type, 1 side(Sb) polished Gloveboxes & Dry Rooms 96 Sartorius KSW-Heat Oven2" InSb wafer (N type, Te doped) Size: 2" dia x 0. 45 0. 5mm thick with thickness tolerance + 25 um Orientation <111>B + 0. 5o Polishing: one side side(Sb) polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation <111>B + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (5. 0E17 2. 0E18) cm 3 @77K Mobility 24,000 34,000 cm2 Vs EPD <1. 0

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