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LaAlO3, (100) orn. EPI polishing 3" x 0.5mm wafer 1 SP - LAOa76D05C1US Orientation 111A 1 Pic

$811.09

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Conductive type:          N-type/ P-dped

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LaAlO3, (100) orn. EPI polishing 3" x 0.5mm wafer 1 SP - LAOa76D05C1US Orientation 111A 1 PicLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 3" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +

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