Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved Thin Film Deposition & Dimensions Applications Optional 4-pin
$343.85
Description
& Dimensions Applications Optional 4-pin electrical wires are available at the options bar (Pic
CIP30-E300 is CIP or WIP Die for solid-state battery research
30mm Note:
4" OD larger diameter Alumina tube with high purity 95% Al2O3 material
One die kit container
Bi2Te3 Highly Oriented Crystal Substrate (0001) irregular shape(about 10x10x0.1 mm) as Cleaved Thin Film Deposition & Dimensions Applications Optional 4-pinBismuth telluride crystal substrate is highly oriented crystal ( not single crystal ), which is a narrow gap layered semiconductor with a hexagonal structure. The valence and conduction band structure can be described as a many ellipsoidal model with 6 constant energy ellipsoids that are centered on the reflection planes. General thermoelectric materials, thermoelectric factor is currently the largest pure phase block; mechanical dissociation can get
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