GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode Purity: 99
$459.43
Description
Purity: 99
78 kg Force
Two electrode feed-throughs are inserted inside the vessel to measure battery properties
Polished surface: Two sides polished
004mm) (Inside) (Melting Point: ~660ºC)
GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode Purity: 99Wafer Specifications:. Size: 2" diameter x 0. 5 mm, Orientation: (111) B Flats: SEMI PF <01 1>. SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)
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