Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US Flanges working temperature 1200°C Dimension TBD

working temperature 1200°C Dimension TBD Tube Size  2" ( 50 mm ) or

The digital pressure gauge is optional

Specifications Cap Cap with Built-in PTC Thermistor for overcurrent protection

4 wheels with two brakes

The bench-top EQ-FH-36 fume hood provides a working space that minimizes the chance of damages from a hazardous situation

Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US Flanges working temperature 1200°C Dimension TBDGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: Two sides optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 0. 1 0. 5 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: