Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US DyScO3 we highly recommend you use

we highly recommend you use a PTFE flange assembly:

The shape of the electrodes it produces is also handy for the later processing steps such as tab welding by MSK-800 and electrode stacking by MSK-111A

140 mm length

please order it accordingly

Power Extension One extension socket (Max power 1500W) is installed in the glove box main chamber

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 1SP Resistivity: 0.1-1.0 ohm.cm - GESbe50D05C1R01US DyScO3 we highly recommend you useGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : One side optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 0. 1 0. 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A