Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm Glass Substrates Panel cutout:

Panel cutout:

This electrode strip is composed by coating LiNiCoMnO2 on double sides of Aluminum foil

Frontward and backward rotation

Chemical Composition Indium (III) Chloride (InCl3) Purity Material Basis 99

Epitaxial thin Film Composition <110>  CeO2

Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, N type Sb doped,R:10-15 Ohm.cm Glass Substrates Panel cutout:Ge Wafer Specification Growing Method: CZ Wafer Size: 5x5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 10 15 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer