GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3 Thermal Evaporation ServiceLife 2000 hours

ServiceLife 2000 hours

As for 260 mm cathode substrate

Doping:                                     Si doped

Please click on the below pictures to view the structure Slot Die

Mobility:                          184-200cm^2/V

GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3 Thermal Evaporation ServiceLife 2000 hoursGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 35mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (2. 67 3. 27) x 10^18 cm^3 Mobility: 116 125 cm^2 V. S EPD: <5000 cm^2 Resistivity: (1. 64 1. 88)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces