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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01 Silicon Nitride (Si3N4) Substrate Working voltage AC 110~220V
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01 Silicon Nitride (Si3N4) Substrate Working voltage AC 110~220V
$40.52
Description
Working voltage AC 110~220V
Printed Grid Area: 6 x6 (100 Grid)
Compliance CE Certified Warranty One year limited with lifetime support
Dimensions Furnace: 520Lx 380Wx 310H (mm)
Resistivity: 1015 W
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01 Silicon Nitride (Si3N4) Substrate Working voltage AC 110~220VSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 0. 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument Size: 50. 8 diameter + 0. 5 mm x 0. 28 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A
Shipping Notes
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