Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery 200g (50 pcs)

200g (50 pcs)

01 increments

Surface roughness:      Prime

The micrometer head's controllable accuracy is 10 microns

Thickness of the Ni layer is 400 nm

Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm Coin Cell Battery 200g (50 pcs)Single Crystal: Si Growth Method: FZ (Floating Zone) Type Dopant: N Phosphorus Orientation: (111) Resistivity: 15,000 25,000 ohm cm Diameter: 100 mm + 0. 5 mm Thickness: 0. 3 mm + 0. 025 mm Primary Flat: <110> Polish: One side polished Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater