InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished Ga As for the LiFePO4 (LFP)

As for the LiFePO4 (LFP) electrode sheet

the system will automatically reconnect with the PC

Conduction Type: N-type

EPD:                                <5000cm^-2

Surface Polishing:           one side epi polished

InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished Ga As for the LiFePO4 (LFP)10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K