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NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP - NGGc101005S1 BaF2 Silicon Nitride Pellet Pressing Die
NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP - NGGc101005S1 BaF2 Silicon Nitride Pellet Pressing Die
$137.32
Description
Silicon Nitride Pellet Pressing Die with Heating jacket (550°C Max
52" L x 35" W x 75" H
Micrometer Head
3 1C@51cls Optional You may order precursor to may your own composition ( click below link to order:NiCoAl Precursor Powder (Ni0
Conductor type: N-type
NGG (Nd3Ga5O12) Substrate (111 ) 10x10x0.5 mm, 1 SP - NGGc101005S1 BaF2 Silicon Nitride Pellet Pressing DieSingle crystal Nd3Ga5O12 ( NGG) Substrate Size: 10mm x 10mm x 0. 5 mm Orientation: (111) Polishing: one side polished. Surface finish (RMS or Ra) : < 5A Packing: in 1000 class clean room with plastic bag Typical Properties of NGG Structure: Cubic Lattice Constant: a=12. 505 Purity: > 99. 99% Melting Point: 1550 oC Density: 6. 60 g cm3 Hardness: ~7. 2mohns Reflectivity ~1. 94: Dielectric constant ~ 12. 08 XRD: Reference article: DIELECTRIC PROPERTIES
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