Ge Substrate (110) 10x5x 0.5 mm, 1 SP, N-type Undoped .R>50 ohm.cm Si Temperature range: -40° C to

Temperature range: -40° C to +90° C

Heating Rate:  7°C/min (5°C/min is recommended)

30-200 cc/min

It's normal that the target pressure decreases a little bit during the pressure holding time

It is perfect to match MTI 150 low-speed saw or other brands of low-speed saw

Ge Substrate (110) 10x5x 0.5 mm, 1 SP, N-type Undoped .R>50 ohm.cm Si Temperature range: -40° C toSpecifications Growing Method: CZ Wafer Size: 10x5x0. 5 mm Surface Polishing: one side optical polished Orientation: (110) Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater