Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm CdTe & CdZnTe/CZT those with High vapor pressure

those with High vapor pressure or high viscosity

A: Because of shipping regulations from packing to shipping will cost 90% or more

Features: 8

67 mm  Height    =  3

3 conductor colors: black

Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm CdTe & CdZnTe/CZT those with High vapor pressureThermal oxide Layer SiO2 layer on Silicon wafer Oxide layer thickness: 100 nm ( 1000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type As dped Resistivity: 0. 001 0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10 x 10 x 0. 5 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related