InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Used for DHG-9070 serious Gravity

Used for DHG-9070 serious Gravity Convection Oven

Different types of curves can be created by software based on user definition

Heating elements are very brittle and could break if the separator is too wide or if too much pressure is applied on them

Such syringe pump can precisely control the volume of the solution per unit coating area been fed into the gap between the cylindrical barrier and the glass substrate

Cutting Blade

InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Used for DHG-9070 serious Gravity2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility