One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate Br 20 Specific Capacity (mAh/g) 217

20 Specific Capacity (mAh/g) 217 ± 3 Coulombic Efficiency (%) 89 ± 1 (first cycle)

GaN template on silicon is a cost effective way to replace GaN single crystal substrate

What is Included:

Whole set  pressing die includes One  32 mm  I

(The 380VAC version is available upon request)

One Side (300-400) nm YBCO Film on SrTiO3 (100) 10x10x0.5 mm substrate Br 20 Specific Capacity (mAh/g) 217Epitaxial YBCO HTS Thin Film on SrTiO3 substrate up to 30 mm in diameter MTI Corp joins with several research institutes around the world, to finally make high Tc superconducting epitaxial thin film commercially available at an affordable price. MTI supplies high quality double side epitaxial thin film up to 3" diameter on LaAlO3, LSAT, Al2O3 and SrTiO3 single crystal substrate by a unique technology. This will make YBCO thin film available at low