Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2 Resistivity: 1-5 Ohms/cm (If you

Resistivity:                     1-5 Ohms/cm  (If you would like to measure the resistivity accurately

Density:            >80%

Working Temperature: < 50°C

turn the hydraulic valve to Lock position when not in use

Polish:           EPI polished by CMP tecnology with less sub-surface lattice damage

Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1 CaF2 Resistivity: 1-5 Ohms/cm (If youNickel Film Nickel Film Thickness: 100nm Film Crystallinity: (111) oriented polycrystals Silicon Wafer Specifications: Conductive type: Si P type, B doped Resistivity: 1 20 ohm cm Size: 10x10x0. 5mm SiO2 Thichness: 300 nm Orientation: (100) + 0. 5o Polish: One sides polished Surface roughness: Prime Packing: Vacuum packed on a 4" single wafer carrier Optional: you may need tool below to handle the wafer ( click picture to order ) Related Products Thin