LaAlO3, (100) orn. 20x20 x 0.5mm substrate , one side polished Carriers & Boxes Each flange is equipped with

Each flange is equipped with a water-cooling jacket which fully protects the O-rings during the heating process

01Ohms/cm (If you would like to measure the resistivity accurately

Coating Area: 241 mm L x 175 mm W (Left and Right-hand side 12

it is suggested to fasten the grinder on the platform

The sample holder and container are not included

LaAlO3, (100) orn. 20x20 x 0.5mm substrate , one side polished Carriers & Boxes Each flange is equipped withLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Specifications Wafer Size: 20x20 x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5 Deg