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VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Carrier concentration: (5

$290.20

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Carrier concentration: (5

Note: 110V power cord was included for immediate use

ID:    50 mm

you may section multi-sample  in one time (click pic left to learn how)

Color of Cover/  Background:        Transparent/Transparent

VGF InP (100) undoped, 2" x 0.35 mm wafer, 2sp - IPUa50D035C2US Boron-Nitride on Silicon Carrier concentration: (5InP single crystal wafer Orientation: (100) Size: 2" diameter x 0. 35 mm Doping: Un doped Conducting type: S C Polish: Two sides polished Resistivity: (2. 48 3. 34)10^ 1 ohm. cm Mobility: 4250 4340cm^2 V. S EPD: <5000 cm^2 Carrier Concerntration: (4. 34 5. 91) ^15 cmE 3

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