Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm Feeders High electrical conductivty

High electrical conductivty

Refractive index:                                                    2

Larger size Mg single crystal wafer upto 2" dia

591λ2 / (λ2 -0

4W m-1K-1)

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, P-type ,B-doped 1SP R:1-10 ohm.cm Feeders High electrical conductivtyThermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: P type B dped Resistivity: 1 10 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" + 0. 5 mm in diameter x 0. 5 mm + 0. 05 mm th Orientation: (100) + 1o Polish: one