50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga dopedGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga doped"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga dopedGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga doped"> 50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga dopedGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:"> Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga doped – peerflow.io

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Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga doped

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50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga doped">
Description

Doping:                           Ga doped

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24 )x 10^8 Ohm

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Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US Orientation 111A Doping: Ga dopedGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:

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