SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 Cutting Blade Come with 5

Cutting Blade Come with 5 pcs of the impregnated diamond blade of 4" Dia × 0

Interior Material: Stainless Steel and Fibrous Refractory Shell

Packing:                             50g per bag packed in dry inert gas

Rolling pressing is necessary to ensure good density and adhesion of electrode materials to the current collector substrate after coating

LSAT LaAlO3  MgO Plasma Cleaner  NdCaAlO4 NdGaO3  SrTiO3 Wafer Box SrLaAlO4  Other GGG YSZ Film Coater

SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 Cutting Blade Come with 5Specifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um