Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001 CdSe and a working temperature of

and a working temperature of 1050°C Max

EPD                                                     <15000 / cm 2

Application case

Pocket Size(mil):   L280*W280*D30 Pocket Size(mm):  L7

tip-collector distance

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001 CdSe and a working temperature ofThermal oxide Layer Research Grade, about 80% useful area SiO2 layer on 4"Silicon wafer Oxide layer thickness: 300 nm (3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type Sb dped Resistivity: 0. 01 0. 02 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" + 0. 5 mm x 0. 525 mmth Orientation: (111) + 0. 5o Polish: one side