Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy Ingestion-build-228203 The sequence of the product

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Note: BS EN 16321-2 does not specify the test method for the air and vapour tightness testing of the vapour recovery systems at service stations

Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy Ingestion-build-228203 The sequence of the product1 Scope This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 1010 atoms cm2 to 1 1014 atoms cm2; contamination elements with atomic surface densities from 5 108