Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces 8x25ml Hi-throughput Jar is available

8x25ml Hi-throughput Jar is available upon request

2 sides polished

Application Note If your slurry viscosity is high

Film Coaters

Temperature control console provides up to 30 segments programmable with +/- 1 ºC accuracy

Al2O3- Sapphire Wafer, C-plane (0001), 0.25"x0.25"x0.5mm, 1SP - ALC060605S1 Furnaces 8x25ml Hi-throughput Jar is availableFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 0. 25" x 0. 25" x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. C plane orientation Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A Package: Each wafer is packed in 1000 class clean room with 100 grade