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Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >5000 ohm-cm Al2O3 Sample Plate The metal foam captures graphene
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Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >5000 ohm-cm Al2O3 Sample Plate The metal foam captures graphene
$143.34
Description
The metal foam captures graphene in a similar foam structure
Dielectric Constant: e (11) = e (22) = 9
Doping S-doped
Spin Speed & Time
7 is a newly developing crystal with perovskite structure and twin-free
Si Wafer (100), 4" dia x 0.5 mm, 1SP, N-type , Undoped with resistivities: >5000 ohm-cm Al2O3 Sample Plate The metal foam captures grapheneSingle crystal: Si Conductivity: Undoped Type: N Resistivity:>5000 ohm CM Size: 4" diameter x 0. 5 mm Orientation:(100) Polish: One side polished Surface roughness:< 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
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